Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture | Project and Innovation Support
15/01/2021

Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture

Publication Number: PT2462611T
Application Date: 5. 8. 2010
Assignee/Applicant: Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES]
Inventor: Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins
Title: Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture
Description: The present invention relates to a high performance thin-film, transistor entirely processed at temperatures not exceeding 150°C, using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The invention relates to the use of sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga-In-Zn oxide as channel layers and where the dielectric was the com- bination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceed- ing 35 cm2 V-1 s-1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec-1.
Drawings:
Category: Nanotechnology and New Materials
Technology application codes: Electronics, IT and telecoms
Market application codes: Computer related, Other electronics related
www: https://worldwide.espacenet.com/patent/search/family/043544816/publication/PT2462611T?q=PT2462611
Patent offices: PT

 

Extended patent application


Publication Number: BR112012002681A2
Application Date: 5. 8. 2010
Assignee/Applicant: Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES]
Inventor: Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins
Title: Dielétricos multicompostos amorfos baseados na mistura de materiais com elevada banda proibida e k elevado, respectivos dispositivos e fabricação
www: https://worldwide.espacenet.com/patent/search/family/043544816/publication/BR112012002681A2?q=pn%3DBR112012002681A2

 

Extended patent application


Publication Number: EP2462611B1
Application Date: 5. 8. 2010
Assignee/Applicant: Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES]
Inventor: Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins
Title: Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture
www: https://worldwide.espacenet.com/patent/search/family/043544816/publication/EP2462611B1?q=EP2462611B1

 

Extended patent application


Publication Number: WO2011016741A2
Application Date: 5. 8. 2010
Assignee/Applicant: Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES], Pedro Miguel Candido Barquinha [PT], Elvira Maria Correia Fortunato [PT], Rodrigo Ferrão de Paiva Martins [PT], Pedro Goncalves Goncalo [PT], Marija Kosec [SI], Danjela Kuščer Hrovatin [SI], Luis Miguel Nunes Pereira [PT]
Inventor: Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins
Title: Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture
www: https://worldwide.espacenet.com/patent/search/family/043544816/publication/WO2011016741A2?q=pn%3DWO2011016741A2

 

Extended patent application


Publication Number: US8987097B2
Application Date: 5. 8. 2010
Assignee/Applicant: Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES], Pedro Miguel Candido Barquinha [PT], Elvira Maria Correia Fortunato [PT], Rodrigo Ferrão de Paiva Martins [PT], Pedro Goncalves Goncalo [PT], Marija Kosec [SI], Danjela Kuščer Hrovatin [SI], Luis Miguel Nunes Pereira [PT]
Inventor: Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins
Title: Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture
www: https://worldwide.espacenet.com/patent/search/family/043544816/publication/US8987097B2?q=US8987097B2