Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture
Publication Number: | PT2462611T |
Application Date: | 5. 8. 2010 |
Assignee/Applicant: | Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES] |
Inventor: | Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins |
Title: | Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture |
Description: | The present invention relates to a high performance thin-film, transistor entirely processed at temperatures not exceeding 150°C, using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The invention relates to the use of sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga-In-Zn oxide as channel layers and where the dielectric was the com- bination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceed- ing 35 cm2 V-1 s-1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec-1. |
Drawings: | |
Category: | Nanotechnology and New Materials |
Technology application codes: | Electronics, IT and telecoms |
Market application codes: | Computer related, Other electronics related |
www: | https://worldwide.espacenet.com/patent/search/family/043544816/publication/PT2462611T?q=PT2462611 |
Patent offices: | PT |
Extended patent application
Publication Number: | BR112012002681A2 |
Application Date: | 5. 8. 2010 |
Assignee/Applicant: | Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES] |
Inventor: | Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins |
Title: | Dielétricos multicompostos amorfos baseados na mistura de materiais com elevada banda proibida e k elevado, respectivos dispositivos e fabricação |
www: | https://worldwide.espacenet.com/patent/search/family/043544816/publication/BR112012002681A2?q=pn%3DBR112012002681A2 |
Extended patent application
Publication Number: | EP2462611B1 |
Application Date: | 5. 8. 2010 |
Assignee/Applicant: | Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES] |
Inventor: | Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins |
Title: | Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture |
www: | https://worldwide.espacenet.com/patent/search/family/043544816/publication/EP2462611B1?q=EP2462611B1 |
Extended patent application
Publication Number: | WO2011016741A2 |
Application Date: | 5. 8. 2010 |
Assignee/Applicant: | Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES], Pedro Miguel Candido Barquinha [PT], Elvira Maria Correia Fortunato [PT], Rodrigo Ferrão de Paiva Martins [PT], Pedro Goncalves Goncalo [PT], Marija Kosec [SI], Danjela Kuščer Hrovatin [SI], Luis Miguel Nunes Pereira [PT] |
Inventor: | Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins |
Title: | Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture |
www: | https://worldwide.espacenet.com/patent/search/family/043544816/publication/WO2011016741A2?q=pn%3DWO2011016741A2 |
Extended patent application
Publication Number: | US8987097B2 |
Application Date: | 5. 8. 2010 |
Assignee/Applicant: | Jožef Stefan Institute [SI], The NOVA School of Science and Technology [PT], University of Barcelona [ES], Pedro Miguel Candido Barquinha [PT], Elvira Maria Correia Fortunato [PT], Rodrigo Ferrão de Paiva Martins [PT], Pedro Goncalves Goncalo [PT], Marija Kosec [SI], Danjela Kuščer Hrovatin [SI], Luis Miguel Nunes Pereira [PT] |
Inventor: | Danjela Kuščer Hrovatin, Elvira Maria Correia Fortunato, Gonçalo Pedro Gonçalves, Luís Miguel Nunes Pereira, Marija Kosec, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins |
Title: | Amorphous Multicomponent Dielectric Based on the Mixture of High Band Gap and High K Materials, Respective Devices and Manufacture |
www: | https://worldwide.espacenet.com/patent/search/family/043544816/publication/US8987097B2?q=US8987097B2 |