Bi, Pr and V-free Novel ZnO Voltage-sensitive Ceramic Material and Preparation Method Thereof

Publication Number: CN106747404A
Application Date: 22. 1. 2017
Assignee/Applicant: Jožef Stefan Institute [SI], Shanghai institute of ceramics [CN], Chinese academy of sciences [CN]
Inventor: Li Guorong, Slavko Bernik, Tian Tian, Matejka Podlogar, Zheng Xuanying, Cheng Lihong, Zeng Jiangtao, Ruan Xuezheng
Title: Bi, Pr and V-free Novel ZnO Voltage-sensitive Ceramic Material and Preparation Method Thereof
Description: The invention relates to a Bi, Pr and V-free novel ZnO voltage-sensitive ceramic material and a preparation method thereof. The ZnO voltage- sensitive ceramic material is composed of zinc oxide and a modified additive, wherein the content of zinc oxide is 86.5-99.7mol%, and the content of the modified additive is 0.3-13.5mol%; the modified additive comprises 0.1-10mol% of CaCO3, 0.1-1.5mol% of Co2O3, 0.1-1mol% of Cr2O3 and 0-1mol% of La2O3. The voltage-sensitive voltage of the novel ZnO voltage-sensitive ceramic material is 360-700V/mm, the nonlinear coefficient (I-V nonlinear coefficient) alpha is greater than or equal to 18, the leak current IL is less than or equal to 1mA, and the comprehensive property is excellent. The material is equivalent to that of existing Bi-containing zinc oxide voltage-sensitive ceramic industrially produced in property.
Drawings:
Category: Nanotechnology and New Materials
Technology application codes: Electronics, IT and telecoms
Market application codes: Computer related, Other electronics related
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Patent offices: CN