Electro-optical Modulator Based on a Layered Semiconductor Crystal Structure

Publication Number: GB2546265A
Application Date: 12. 1. 2016
Assignee/Applicant: Jožef Stefan Institute [SI], Fondazione Istituto Italiano di Tecnologia [IT]
Inventor: Christoph Gadermaier, Daniele Vella, Andras Kis, Dmitry Ovchinnikov, Guglielmo Lanzani, Nicola Martino, Maria Rosa Antognazza
Title: Electro-optical Modulator Based on a Layered Semiconductor Crystal Structure
Description: The invention provides an electro-optical modulator having: a mono-or multi-layered film of 2-dimensional semiconducting material having a layered crystal structure; and electrodes formed at each side of the semiconducting material, wherein the application of electrical potential to said electrodes and across said semiconducting material modulates the transmittance of light of certain wavelengths as a function of the voltage. Integrated photonic circuits and optical devices having such modulators are also provided.
Drawings:
Category: Nanotechnology and New Materials
Technology application codes: Electronics, IT and telecoms, Physical and exact sciences
Market application codes: Communications, Computer related, Other Electronics related
www: https://worldwide.espacenet.com/patent/search/family/055445905/publication/GB2546265A?q=GB2546265A
Patent offices: GB

 

Extended patent application


Publication Number: WO2017121608A1
Application Date: 22. 12. 2016
Assignee/Applicant: Jožef Stefan Institute [SI], Fondazione Istituto Italiano di Tecnologia [IT]
Inventor: Christoph Gadermaier, Daniele Vella, Andras Kis, Dmitry Ovchinnikov, Guglielmo Lanzani, Nicola Martino, Maria Rosa Antognazza
Title: Electro-optical Modulator Based on a Layered Semiconductor Crystal Structure
www: https://worldwide.espacenet.com/patent/search/family/055445905/publication/WO2017121608A1?q=GB2546265A