Electro-optical Modulator Based on a Layered Semiconductor Crystal Structure
Publication Number: | GB2546265A |
Application Date: | 12. 1. 2016 |
Assignee/Applicant: | Jožef Stefan Institute [SI], Fondazione Istituto Italiano di Tecnologia [IT] |
Inventor: | Christoph Gadermaier, Daniele Vella, Andras Kis, Dmitry Ovchinnikov, Guglielmo Lanzani, Nicola Martino, Maria Rosa Antognazza |
Title: | Electro-optical Modulator Based on a Layered Semiconductor Crystal Structure |
Description: | The invention provides an electro-optical modulator having: a mono-or multi-layered film of 2-dimensional semiconducting material having a layered crystal structure; and electrodes formed at each side of the semiconducting material, wherein the application of electrical potential to said electrodes and across said semiconducting material modulates the transmittance of light of certain wavelengths as a function of the voltage. Integrated photonic circuits and optical devices having such modulators are also provided. |
Drawings: | |
Category: | Nanotechnology and New Materials |
Technology application codes: | Electronics, IT and telecoms, Physical and exact sciences |
Market application codes: | Communications, Computer related, Other Electronics related |
www: | https://worldwide.espacenet.com/patent/search/family/055445905/publication/GB2546265A?q=GB2546265A |
Patent offices: | GB |
Extended patent application
Publication Number: | WO2017121608A1 |
Application Date: | 22. 12. 2016 |
Assignee/Applicant: | Jožef Stefan Institute [SI], Fondazione Istituto Italiano di Tecnologia [IT] |
Inventor: | Christoph Gadermaier, Daniele Vella, Andras Kis, Dmitry Ovchinnikov, Guglielmo Lanzani, Nicola Martino, Maria Rosa Antognazza |
Title: | Electro-optical Modulator Based on a Layered Semiconductor Crystal Structure |
www: | https://worldwide.espacenet.com/patent/search/family/055445905/publication/WO2017121608A1?q=GB2546265A |